Rahim Faez
Associate Professor
faez@sharif.edu
rfaez@yahoo.com
+98-21-66164350
103 West-Ground Floor
Department of Electrical Engineering, Sharif University of Technology, Azadi Ave., Tehran, Iran.
Office Hours:
Sunday & Tuesday Morning 8-12
Main References:
1- S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices, JOHN WILEY & SONS, INC. 2007.
2- Yuan Taur and Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press 2009.
3- Umesh K. Mishra and Jasprit Singh, Semiconductor Device Physics and Design, Springer 2008.
4- Ben G. Streetman and Sanjay Banerjee, Solid States Electronic Devices, Pearson Education, Limited 2014.
5- Yannis Tsividis and Colin McAndrew, Operation and Modeling of The MOS Transistor, McGraw-Hill, Inc. 2011.
Supplementary References:
1- S. M. Sze and M. K. Lee, Semiconductor Devices, Physics and Technology, JOHN WILEY & SONS, INC. 2010.
2- Kevin F. Brennan and April S. Brown, Theory of Modern Electronic Semiconductor Devices, JOHN WILEY & SONS, INC. 2002.
Course Syllabus:
1- Review of Semiconductor Physics
2- P-N Heterostructures
3- MOS Capacitors
4- JFETs, MESFETs and MODFETs
5- MOSFETs
6- BJT Advanced Concepts (Such as HBT and Advanced Phenomena)
7- Optoelectronic Devices
8- High-Frequency Devices
9- High-Power Devices