Course info

Principles of Solid State Devices 25772

Sharif University of Technology Semester: Fall 2016 Instructor: Dr. Mehdi Fardmanesh Office: Room # 603 Electrical Engineering. Phone: x5920 Office Hours: Saturdays 9:30 - 10:30 Mondays 9:30 - 10:30

Assistants: M. Seemchi, M. Monajatipour, F. Fathi, A. Valinejad Course Sched.: Sundays 10:30 - 12:00 Room # Bargh 301 Tuesdays 10:30 - 12:00 Room # Bargh 301

Textbook: Ben G. Streetman, Solid States Electronic Devices, Prentice Hall. Suppl. Text.: 1. Donald A. Neamen, Semiconductor Physics & Devices, 1997, 2. R. F. Pierret & G.W. Neudeck, Modular Series on Solid State Devices, Vol. I - V, 3. C. Kittle, Introduction to Solid State Physics (7th ed.), 1996, 4. S. Wang, Fundamentals of Semiconductor theory & Device Physics, 1989, 5. S. M. Sze, Physics of Semiconductor devices.

Course Outlines:

1. Crystal Structures & Growth of Semiconductors.

2. Foundations of Modern Electronics.

3. Energy Bands In Solids And Intrinsic & Extrinsic Semiconductors.

4. Carrier Concentrations & Conductivity In Semiconductors.

5. Excess Carriers and the Transport & The Recombination.

6. Principles of P-N Junctions and Equilibrium States.

8. P-N Junction Diodes and the Transient & A-C Conditions.

9. Principles of Schottky barrier & Heterojunction based devices.

10. S-S & M-S Special Purpose Diodes & Solar Cells.

11. Junction Field Effect Transistors & I-V characteristics.

12. Principles of MOSFETs structure and operation.

13. Characteristics of MOS Field Effect Transistors.

14. Principles of Bipolar Junction Transistors & Its Operation.

15. BJT Biasing and Ebers-Moll model; Operational States.

16. Principles of p-n-p-n Based Devices.

17. Principles of HEMTs.

Course Website: http://ee.sharif.edu/~ssdevice Grading: HWs & Quizzes: 14% (Tentative) Midterm: 38% Final Exam: 48% Project: xx